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| PC923 PC923 s Features 1. Built-in direct drive circuit for MOS-FET/ IGBT drive ( IO1P , I O2P : 0.4A) 2. High speed response ( t PLH , t PHL : MAX. 0.5 s ) 3. Wide operating supply voltage range ( Vcc : 15 to 30V, Ta = -10 to 60C ) 4. High noise reduction type ( CM H = MIN. - 1 500V/ s ) ( CM L = MIN. 1 500V/ s ) 5. Recognized by UL, file No. E64380 6. High isolation voltage between input and output( VISO = 5 000 V rms ) High Speed Photocoupler for MOS-FET / IGBT Drive s Outline Dimensions ( Unit : mm ) Internal connection diagram 1.2 0.3 8 6.5 0.5 7 PC923 Amp. 1 2 3 4 1 2 3 7.62 0.3 0.5TYP. 9.66 0.5 3.50.5 0.5 g Lead forming type ( I type ) and taping reel type ( P type ) are also available. ( PC923I/PC923P ) gg TUV ( VDE 0884 ) approved type is also available as an option. 0.85 0.2 6 5 8 7 Tr1 6 5 Tr2 Interface Anode mark 4 0.5 3.05 3.4 s Applications 1. Inverter controlled air conditioners 0.5 0.1 2.54 0.25 0.26 0.1 = 0 to 13 1 2 3 4 NC Anode Cathode NC 5 6 7 8 O1 O2 GND V CC * " OPIC " ( Optical IC ) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and signalprocessing circuit integrated onto a single chip. s Absolute Maximum Ratings Input Parameter Forward current *1 Reverse voltage Supply voltage O1 output current *2 O1 peak output current O2 output current *2 O2 peak output current O1 output voltage Power dissipation Total power dissipation *3 Isolation voltage Operating temperature Storage temperature *4 Soldering temperature ( Ta = T opr unless otherwise specified ) Symbol IF VR V CC I1 IO1P IO2 IO2P VO1 PO P tot V iso T opr T stg T sol Rating 20 6 35 0.1 0.4 0.1 0.4 35 500 550 5 000 - 25 to + 80 - 55 to + 125 260 Unit mA V V A A A A V mW mW V rms C C C Output *1 Ta = 25C *2 Puise width <= 0.15s, Duty ratio:0.01 *3 40 to 60% RH, AC for 1 minute, Ta = 25C *4 For 10 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " PC923 s Electro-optical Characteristics Parameter Forward voltage Input Reverse current Terminal capacitance Operating supply voltage O1 low level output voltage O2 high level output voltage O2 low level output voltage O1 leak current O2 leak current High level supply current Low level supply current *6 ( Ta = T opr unless otherwise specified ) Conditions Ta = 25C, I F = 10mA Ta = 25C, I F = 0.2mA Ta = 25C, V R = 5V Ta = 25C, V = 0, f = 1MHz Ta = - 10 to 60C VCC1 = 12V, VCC2 = - 12V I01 = 0.1A, I F = 5mA VCC = V01 = 24V, I 02 = - 0.1A, I F = 5mA VCC = 24V, I 02 = 0.1A, I F = 0 Ta = 25C, V CC = V01 = 35V, I F = 0 Ta = 25C, V CC = V02 = 35V, I F = 5mA Ta = 25C, VCC = 24V, I F = 5mA VCC = 24V, I F = 5mA Ta = 25C, V CC = 24V, I F = 0 VCC = 24V, I F = 0 Ta = 25C, VCC = 24V VCC = 24V Ta = 25C, DC = 500V, 40 to 60% RH Ta = 25C, V CC = 24V, IF = 5mA RC = 47 , C G = 3 000pF Ta = 25C, V CM = 600V( peak ) IF = 5mA, V CC = 24V, VO2H = 2.0V Ta = 25C, V CM = 600V( peak ) IF = 0, V CC = 24V, VO2L = 2.0V *5 Symbol V F1 V F2 IR Ct V CC V O1L V O2H V O2L IO1L IO2L ICCH ICCL I FLH R ISO t PLH t PHL tr tf CH M CML MIN. 1.2 15 15 18 0.3 0.2 5 x 1010 - TYP. 1.6 1.5 30 0.2 21 1.2 6 8 1.5 1011 0.3 0.3 0.2 0.2 - 30 30 MAX. 1.75 10 250 30 24 0.4 2.0 500 500 10 14 13 17 3.0 5.0 0.5 0.5 0.5 0.5 - Unit V V A pF V V V V V A A mA mA mA mA mA mA s s s s kV/ s Fig. 1 2 3 4 5 Output 6 Transfer characteristics " LowHigh " threshold input current Isolation resistance " LowHigh " propagation delay time " HighLow " propagation delay time Rise time Fall time Instantaneous common mode rejection voltage " Output : High level " Instantaneous common mode rejection voltage " Output : Low level " 7 - Response time 8 9 kV/ s *5 When measuring output and transfer characteristics, connect a by-pass capacitor ( 0.01 F or more ) between V CC and GND near the PC923 . *6 I FLH represents forward current when O2output goes from low to high. s Truth Table Input ON OFF O2 Output High level Low level Tr. 1 ON OFF Tr. 2 OFF ON PC923 s Test Circuit Fig. 1 2 5 IF 3 7 PC923 6 VV O1L VCC2 8 VCC1 IF 3 7 Fig. 2 2 8 5 PC923 6 VO2H V IO2 VCC Fig. 3 8 2 5 IF 3 7 PC923 6 V VO2L VCC Fig. 4 8 2 5 IF 3 7 PC923 6 VCC A IO1L Fig. 5 8 2 5 IF 3 7 PC923 6 A VCC Fig. 6 8 2 5 IF 3 7 PC923 6 A ICC VCC Fig. 7 8 2 5 IF variable 3 7 PC923 6 V VCC VIN Fig. 8 8 tr = tf = 0.01 s Pulse width 5 s Duty ratio 50 % 2 5 PC923 6 3 7 VOUT RG VCC CG Fig. 9 8 A SW B 2 5 PC923 6 3 7 + VOUT waveform tr VCM (Peak) VCM waveform GND tf V VO2 90% 50% 10% VCC VIN waveform tPLH tPHL 50% VCM CMH , V O2 waveform SW at A, I F = 5mA CML , V O2 waveform SW at B, I F = 0mA VO2L VO2H VO2H VO2L GND PC923 Fig.10 Forward Current vs. Ambient Temperature 60 Fig.11 Power Dissipation vs. Ambient Temperature 600 Power dissipation PO , P tot ( mW ) 50 Forward current I F ( mA ) 500 P tot 400 PO 300 40 30 20 200 10 0 - 25 100 0 - 40 0 25 50 75 80 100 Ambient temperature T a ( C ) 125 0 25 50 75 80 100 125 Ambient temperature T a ( C ) Fig.12 Forward Current vs. Forward Voltage 100 Fig.13 " LowHigh " Relative Threshold Input Current vs. Supply Voltage 1.2 T a = 25C I FLH = 1 at V CC = 24V 10 Relative threshold input current Forward current I F ( mA ) 1.1 1.0 1 T a = 0C 25C 50C 70C 0.9 0.1 0.8 0.01 1.0 1.2 1.8 Forward voltage V F ( V ) 1.4 1.6 2.0 2.2 0.7 15 18 21 24 27 Supply voltage V CC ( V ) 30 Fig.14 " LowHigh " Relative Threshold Input Current vs. Ambient Temperature 1.6 V CC = 24V I FLH = 1 at T a = 25C Fig.15 O1 Low Level Output Voltage vs. O1 Output Current 0.4 O1 low level output voltage VO1L ( V ) 0.2 0.1 V CC1 = 12V V CC2 = - 12V I F = 5mA T a = 25C Relative threshold input current 1.4 1.2 0.05 1.0 0.02 0.01 0.8 0.6 - 25 0 25 50 75 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 Ambient temperature T a ( C ) O1 output current I O1 ( A ) PC923 Fig.16 O1 Low Level Output Voltage vs. Ambient Temperature 0.5 O1 low level output voltage V O1L ( V ) O2 high level output voltage VO2H ( V ) V CC1 = 12V V CC2 = - 12V I F = 5mA Fig.17 O 2 High Level Output Voltage vs. Supply Voltage 30 T a = 25C I F = 5mA 0.4 27 24 0.3 I O1 = 0.1A 0.2 21 18 0.1 15 12 15 0 - 25 0 25 50 75 Ambient temperature T a ( C ) 100 18 21 24 27 30 Supply voltage V CC ( V ) Fig.18 O2 High Level Output Voltage vs. Ambient Temperature 24 O2 high level output voltage VO2H ( V ) V CC = 24V I F = 5mA 23 I O2 Nearly = 0A 22 - 0.1A 21 Fig.19 O2 Low Level Output Voltage vs. O 2 Output Current 4 O2 low level output voltage VO2L ( V ) 2 1 V CC = 6V T a = 25C 0.5 20 0.2 0.1 19 18 - 25 0 25 50 a 75 ( C ) 100 0.05 0.01 0.02 0.05 0.1 0.2 02 0.5 (A) 1.0 Ambient temperature T O2 output current I Fig.20 O2 Low Level Output Voltage vs. Ambient Temperature 1.5 V CC = 24V O2 low level output voltage VO2L ( V ) 1.4 IF = 0 Fig.21 High Level Supply Current vs. Supply Voltage 12 High level supply current I CCH ( mA ) 10 1.3 I O2 = 0.1A 1.2 8 T a = - 25C 6 25C 80C 4 1.1 1.0 - 25 0 25 50 75 100 2 15 18 21 24 27 30 Ambient temperature T a ( C ) Supply voltage V CC ( V ) PC923 Fig.22 Low Level Supply Current vs. Supply Voltage 14 Low level supply current I CCL ( mA ) s) Fig.23 Propagation Delay Time vs. Forwrad current 1.0 VCC = 24V RG = 47 C G = 3 000pF T a = 75C PLH ( 12 0.8 t PHL 10 T a = - 25C 25C Propagation delay time t PHL , t 0.6 25C - 25C 0.4 8 80C 6 0.2 75C t PLH 0 0 5 T a = - 25C 25C 4 15 18 21 24 27 Supply voltage V CC ( V ) 30 10 15 20 Forwrad current I F ( mA ) 25 Fig.24 Propagation Delay Time vs. Ambient Temperature 1.0 ( s ) V CC = 24V R G = 47 CG = 3 000pF I F = 5mA Propagation delay time tPHL , t PLH 0.8 0.6 t PLH 0.4 t PHL 0.2 0 - 25 0 25 50 a 75 ( C ) 100 Ambient temperature T s Application Circuit ( For Power MOS-FET Driving Inverter ) VCC Anode PC923 O1 O2 GND TTL, microcomputer, etc. + VCC2 = 12V U V W Power supply + VCC1 = 12V (+) Cathode (-) q Please refer to the chapter "Precautions for Use." |
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